RGT8NL65DGTL

Overview

The RGT8NL65DGTL is a single N-channel Field Stop Trench IGBT manufactured by ROHM Semiconductor, housed in an SMD/SMT TO-263-3 (LPDL) package. It features a collector-emitter breakdown voltage of 650 V and a continuous collector current of 8 A at 25°C. The device supports a short-circuit withstand time of 5 µs and includes a built-in fast recovery diode. Key electrical parameters include a maximum gate-emitter voltage of 30 V, a typical collector-emitter saturation voltage of 2.1 V, and a power dissipation rating of 65 W. It operates within a temperature range of -40°C to +175°C.

Feature Summary

• Field Stop Trench technology for low switching and conduction losses
• Integrated very fast and soft recovery FRD
• 5 µs short-circuit tolerance capability

Applications

• Inverter circuits
• Motor drives
• Power supplies

Procurement Notes

Verify the specific ordering suffix against the manufacturer's datasheet to ensure correct packaging and compliance status. Confirm that the component meets RoHS requirements if applicable to your design constraints. Check for any obsolescence notices or last-time-buy statuses before finalizing procurement plans.

Selection Notes

Select this component for applications requiring robust short-circuit protection and integrated freewheeling diodes in a surface-mount form factor. Ensure thermal management strategies account for the 65 W power dissipation limit. Verify that the 8 A current rating aligns with the peak load requirements of the target circuit.

Part Context

This part belongs to the RGT series of ROHM Semiconductor IGBTs, which are designed for high-efficiency power conversion. The LPDL package offers a compact footprint suitable for space-constrained designs while maintaining adequate thermal performance for medium-power applications.

Replacement Considerations

Check for direct pin-compatible substitutes within the same ROHM family. Verify that alternative components match the 650V rating, 8A current capacity, and 5µs short-circuit tolerance.