ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 5A TO-220NFM
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：5:00 AM
- Current - Collector Pulsed (Icm)：12:00 AM
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 4A
- Power - Max：16 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：13.5 nC
- Td (on/off) @ 25°C：17ns/69ns
- Test Condition：400V, 4A, 50Ohm, 15V
- Reverse Recovery Time (trr)：40 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3 Full Pack
- Supplier Device Package：TO-220NFM
- Grade：-
- Qualification：-
Download product information
Overview
The RGT8TM65DGC9 is a trench field-stop IGBT from ROHM Semiconductor, designed for inverter applications with a short-circuit withstand time of 5µs. It features a 650V collector-emitter breakdown voltage and a continuous collector current of 4A at 100°C. The typical collector-emitter saturation voltage is 1.65V, with a turn-off fall time of approximately 71ns. Integrated with a very fast and soft recovery FRD, it offers low switching loss. The component is housed in a TO-263LP (LPDL) surface-mount package, suitable for compact power designs.
Feature Summary
- Short-circuit tolerance of 5µs for robust inverter operation
- Integrated RFN series very fast and soft recovery FRD
- Low collector-emitter saturation voltage for reduced conduction loss
- Trench field-stop technology for optimized switching performance
Applications
- Inverter circuits requiring high reliability
- Switching power supplies with compact form factors
- Motor drive systems utilizing surface-mount IGBTs
Procurement Notes
Verify the specific suffix GC9 to confirm the tube packaging configuration and RoHS compliance status. Confirm that the LPDL package dimensions match the target PCB footprint. Ensure the design accounts for the 5µs short-circuit limit during fault conditions. Check for any recent product change notifications regarding material or fabrication relocation.
Selection Notes
Select this component when a surface-mount IGBT with integrated diode is required for 650V applications. The 4A rating suits lower-power inverter stages. Compare the thermal resistance of the LPDL package against through-hole alternatives like the TO-220NFM if heat dissipation is critical. Verify gate drive compatibility with the specified saturation voltage characteristics.
Part Context
This part belongs to the RGT8TM65D series, which includes variants in different packages such as TO-220NFM and TO-262. The TM designation indicates the 5µs short-circuit capability and inverter suitability. The GC9 suffix typically denotes the specific tape-and-reel or tube packaging variant for automated assembly.
Replacement Considerations
Direct pin-compatible replacements within the same series include RGT8NL65DGTL (TO-263-3) or RGT8NS65DGC9 (TO-262), though package footprints differ. Verify electrical parameters against RGT50TM65D or RGT40TM65DGC9 if higher current ratings are acceptable.
