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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 35A TO-3PFM
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：35 A
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 50A
- Power - Max：72 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：94 nC
- Td (on/off) @ 25°C：39ns/143ns
- Test Condition：400V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr)：225 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3PFM, SC-93-3
- Supplier Device Package：TO-3PFM
- Grade：-
- Qualification：-
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Overview
The RGTH00TK65DGC11 is a Field Stop Trench IGBT manufactured by ROHM Semiconductor, designed for high-speed switching applications. It features an integrated Fast Recovery Diode (FRD) and utilizes silicon technology in a TO-3PFM-3 through-hole package. Key electrical parameters include a collector-emitter breakdown voltage of 650 V and a continuous collector current of 35 A at 25°C. The device exhibits a typical collector-emitter saturation voltage of 2.1 V and supports a power dissipation of 72 W. It operates within a junction temperature range of -40°C to +175°C, with a maximum gate-emitter voltage of 30 V.
Feature Summary
- Field Stop Trench IGBT structure optimized for high-speed switching performance
- Integrated Fast Recovery Diode (FRD) for simplified circuit design
- Soft switching capability to reduce voltage overshoot and switching losses
Applications
- Power Factor Correction (PFC) circuits
- Solar inverters
- Uninterruptible Power Supplies (UPS)
- Industrial welding equipment
- Induction Heating (IH) systems
Procurement Notes
Verify the Not Recommended for New Design (NRND) status before initiating any new product development projects. Confirm that the TO-3PFM-3 package dimensions align with existing thermal management and PCB layout constraints. Ensure that the 35 A continuous current rating meets the specific load requirements of the target application under expected operating temperatures.
Selection Notes
Select this component when a single-packaged solution combining an IGBT and FRD is required for high-frequency switching operations. The TO-3PFM-3 package offers a compact form factor suitable for space-constrained designs. Consider the 2.1 V saturation voltage and 72 W power dissipation limits when designing heat sinks for sustained operation at elevated ambient temperatures.
Part Context
This part belongs to the RGTH series of high-speed IGBTs from ROHM Semiconductor. The series is characterized by low switching losses and soft recovery characteristics, making it suitable for efficient power conversion. The RGTH00TK65DGC11 specifically targets applications requiring fast switching speeds within the 650 V voltage class.
Replacement Considerations
Check for availability of alternative parts within the same ROHM RGTH series or other manufacturers' 650V TO-3PFM packages. Verify pinout compatibility and ensure that replacement devices meet or exceed the 35 A current and 72 W power dissipation specifications.
