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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 35A TO-3PFM
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：35 A
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 50A
- Power - Max：72 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：94 nC
- Td (on/off) @ 25°C：39ns/143ns
- Test Condition：400V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3PFM, SC-93-3
- Supplier Device Package：TO-3PFM
- Grade：-
- Qualification：-
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Overview
The RGTH00TK65GC11 is a single-channel, high-speed switching Insulated Gate Bipolar Transistor (IGBT) manufactured by ROHM Semiconductor. It utilizes Field Stop Trench technology to achieve low saturation voltage and fast switching characteristics. The device features a maximum collector-emitter voltage of 650 V and a continuous collector current of 35 A at 25°C. It operates within a junction temperature range of -40°C to +175°C and dissipates up to 72 W of power. Packaged in a TO-3PFM-3 through-hole configuration, it is designed for efficient power conversion applications.
Feature Summary
- High-speed switching capability with Field Stop Trench structure
- Low collector-emitter saturation voltage for reduced conduction loss
- Robust thermal performance supporting operation up to +175°C
Applications
- Power Factor Correction (PFC) circuits
- Solar inverters and photovoltaic systems
- Uninterruptible Power Supplies (UPS)
- Industrial welding equipment
- Induction Heating (IH) appliances
Procurement Notes
Verify the specific suffix GC11 against the manufacturer's latest datasheet to confirm pinout compatibility and RoHS status. Ensure the ordering quantity meets the factory tube packaging requirements, as partial tubes may not be available. Confirm that the TO-3PFM-3 package dimensions align with the target PCB footprint before finalizing procurement orders.
Selection Notes
Select this component when a 650V IGBT with moderate current handling (35A) and fast switching speeds is required. Compare the 2.1V saturation voltage against alternative models to ensure optimal efficiency for the specific load conditions. Verify that the 72W power dissipation rating suits the thermal management strategy of the end application without excessive heatsinking.
Part Context
This part belongs to the RGTH series of high-speed IGBTs from ROHM Semiconductor. It shares the same voltage class and trench technology family with other variants like the RGW00TK65, but differs in current rating and package type. The TO-3PFM package distinguishes it from the more common TO-247N packages found in similar 650V industrial modules.
Replacement Considerations
Direct substitutes include the RGW00TK65GVC11, which offers similar electrical characteristics in the same TO-3PFM package. Other compatible alternatives within the ROHM portfolio should be verified for matching Vceo, Ic, and Vce(sat) specifications to ensure circuit compatibility.
