RGTH40TK65DGC11

$5.60

Description：IGBT TRENCH FS 650V 23A TO-3PFM
Series：-

SKU:ae081103bb0d Category: Single IGBTs Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 23A TO-3PFM
Series：-
Mfr：Rohm Semiconductor
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：23 A
Current - Collector Pulsed (Icm)：80 A
Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 20A
Power - Max：56 W
Switching Energy：-
Input Type：Standard
Gate Charge：40 nC
Td (on/off) @ 25°C：22ns/73ns
Test Condition：400V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr)：58 ns
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-3PFM, SC-93-3
Supplier Device Package：TO-3PFM
Grade：-
Qualification：-

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RGTH40TK65DGC11

Overview

The RGTH40TK65DGC11 is a single N-channel Field Stop Trench IGBT manufactured by ROHM Semiconductor. It features an integrated Fast Recovery Diode (FRD) and utilizes TO-3PFM surface-mount packaging. The device supports a collector-emitter voltage of 650 V and a continuous collector current of 20 A at 25°C, with a maximum power dissipation of 56 W. It operates within a junction temperature range of -40°C to +175°C.

Feature Summary

Integrates a high-speed switching IGBT with a built-in FRD for efficient circuit design
Utilizes Field Stop Trench technology to optimize switching performance and conduction losses

Applications

High-frequency power conversion circuits
Motor drive inverter modules
Industrial power supply systems

Procurement Notes

Verify the specific suffix 'GC11' against official ROHM documentation to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status via the manufacturer's latest datasheet. Ensure thermal management solutions align with the 56 W power dissipation rating under actual operating conditions.

Selection Notes

Select this component for applications requiring high-speed switching capabilities combined with integrated freewheeling diodes. The TO-3PFM package facilitates surface-mount assembly while maintaining robust thermal characteristics suitable for medium-power industrial electronics.

Part Context

This part belongs to the RGTH series of Field Stop Trench IGBTs from ROHM Semiconductor. The series is characterized by optimized trade-offs between switching speed and conduction loss, targeting high-efficiency power conversion applications in industrial and automotive sectors.