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The RGTH40TS65DGC13 is a trench field-stop IGBT from ROHM Semiconductor, designed for inverter applications with a 5µs short-circuit withstand time. It features a 650V collector-emitter voltage rating and a 20A continuous collector current at 100°C. The device integrates a fast recovery diode (FRD) with a typical reverse recovery time of 60ns. Key electrical parameters include a typical collector-emitter saturation voltage of 1.65V and a maximum power dissipation of 144W. It operates within a junction temperature range of -55°C to 175°C and is housed in a TO-247GE package.
Verify the specific suffix GC13 against official ROHM documentation to confirm packaging details and compliance status. Confirm availability status as this component may be designated for existing customers only. Ensure the ordering code matches the required pin configuration and lead plating specifications before procurement.
Select this component for designs requiring robust short-circuit tolerance and integrated freewheeling diodes. Compare the 20A current rating and 1.65V Vce(sat) against thermal management capabilities. Verify that the TO-247GE package fits the PCB layout constraints and cooling requirements of the target application.
This part belongs to the RGT/RGTH series of trench field-stop IGBTs from ROHM. These devices are engineered for high-efficiency power conversion. The 'T' designation indicates suitability for inverter applications with specific short-circuit ratings. The series emphasizes reduced switching losses and improved thermal performance compared to older planar technologies.
Check for direct substitutes within the same ROHM family, such as RGTH40TS65GC11 or RGTH40TS65DGC11, ensuring pin compatibility and electrical parameter alignment. Verify if alternative manufacturers offer equivalent 650V/20A trench IGBTs with similar short-circuit withstand times and integrated FRDs.