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The RGTH40TS65GC13 is a single-channel silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by ROHM Semiconductor. It utilizes trench field-stop technology and is housed in a TO-247-3 through-hole package. The device supports a maximum collector-emitter voltage of 650 V and delivers a continuous collector current of 40 A at 25°C. Key electrical parameters include a typical collector-emitter saturation voltage of 1.6 V, a gate-emitter voltage limit of ±30 V, and a power dissipation rating of 144 W. It operates within a temperature range of -40°C to +175°C.
Verify the specific suffix GC13 against official datasheets to confirm packaging and tape-and-reel specifications. Confirm RoHS compliance status directly from the manufacturer's documentation before procurement. Ensure the component matches the required thermal management design for the specified power dissipation limits.
Select this component for designs requiring a balance of high current handling and low saturation voltage in a standard through-hole package. Compare the 40A rating and 1.6V Vce(sat) against alternative IGBTs to ensure compatibility with existing gate drive circuits and thermal constraints.
This part belongs to the RGTH series of trench field-stop IGBTs from ROHM. It shares architectural similarities with other models in the family but is distinguished by its specific 40A current rating and TO-247-3 packaging configuration designed for robust industrial mounting.
Publicly confirmed direct substitute part numbers are not available in the provided source material. Verify pinout compatibility and electrical ratings carefully when considering cross-brand alternatives.