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The RGTH50TS65GC11 is a single N-channel IGBT from ROHM Semiconductor, utilizing Trench Field Stop technology. It features a collector-emitter voltage (Vceo) of 650 V and a continuous collector current (Ic) of 50 A at 25°C. The device has a maximum power dissipation (Pd) of 174 W in a TO-247N package. Key electrical parameters include a typical collector-emitter saturation voltage (Vce(sat)) of 1.9 V and a gate-emitter leakage current of 200 nA. It operates within a temperature range of -40°C to +175°C.
Verify the specific suffix GC11 against the official datasheet to confirm packaging and tape-and-reel specifications. Ensure the component meets RoHS compliance requirements for your target market. Confirm that the TO-247N package thermal resistance aligns with your heatsinking design constraints before finalizing procurement.
Select this component for applications requiring a balance of low conduction loss and fast switching speeds. The 650V rating suits medium-voltage AC/DC conversion systems. Consider the 174W power dissipation limit when designing thermal management solutions. This part is not recommended for automotive use according to manufacturer guidelines.
This IGBT belongs to the RGTV/RGW series, designed to resolve conflicts between low on-state loss and high-speed switching. The Trench Field Stop technology enables efficient performance in industrial power electronics. It serves as a robust switching element for non-automotive power conversion circuits requiring reliable high-current handling.
Public confirmed substitute part numbers are not available in the provided documentation. Consult the manufacturer's official cross-reference list for verified alternatives.