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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 50A TO-247G
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：50 A
- Current - Collector Pulsed (Icm)：100 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 25A
- Power - Max：174 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：49 nC
- Td (on/off) @ 25°C：27ns/94ns
- Test Condition：400V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247G
- Grade：-
- Qualification：-
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Overview
The RGTH50TS65GC13 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by ROHM Semiconductor. It utilizes Field Stop Trench technology and is housed in a TO-247G package for through-hole mounting. The device features a maximum collector-emitter voltage of 650V and a continuous collector current of 50A at 25°C. Key electrical parameters include a typical collector-emitter saturation voltage of 1.9V, a gate-emitter leakage current of 200nA, and a power dissipation rating of 136W. It operates within a temperature range of -40°C to +175°C.
Feature Summary
- High-speed switching performance enabled by Field Stop Trench structure
- Low collector-emitter saturation voltage for reduced conduction losses
- Robust thermal management capability with high power dissipation rating
- Wide operating junction temperature range for demanding environments
Applications
- General purpose inverters
- Motor drive systems
- Induction heating applications
- Switching power supplies
Procurement Notes
Verify the specific suffix GC13 against the official datasheet to confirm packaging details and compliance status. Ensure the procurement channel provides valid traceability documentation. Confirm that the requested quantity aligns with the manufacturer's standard tube packaging requirements. Check for any obsolescence notices or recommended replacement parts before finalizing orders.
Selection Notes
Select this component when a balance between low conduction loss and fast switching speed is required for 650V applications. The TO-247G package offers a reliable solution for medium-power designs. Consider the 50A current rating and 1.9V Vce(sat) for efficiency calculations. Ensure the thermal design supports the 136W dissipation limit under worst-case operating conditions.
Part Context
This IGBT belongs to ROHM's high-speed switching series designed for general inverter and induction heating markets. It complements other models in the RGTH family by offering optimized performance characteristics for mid-range power applications. The device represents a mature technology platform widely used in industrial and consumer electronics power conversion stages.
Replacement Considerations
Consult the official ROHM product transition list for direct substitutes. Verify pin compatibility and electrical parameter equivalence if considering alternative manufacturers. Ensure any replacement maintains the same package footprint and thermal characteristics.
