RGTH60TK65DGC11

Overview

The RGTH60TK65DGC11 is a single IGBT from ROHM Semiconductor, utilizing Field Stop Trench technology. It features a collector-emitter breakdown voltage of 650 V and a continuous collector current of 60 A at 25°C. The device has a maximum power dissipation of 194 W and operates within a junction temperature range of -40°C to +175°C. Packaged in a TO-247N-3 through-hole housing, it integrates a built-in Fast Recovery Diode (FRD) with a reverse recovery time of 58 ns.

Feature Summary

• Field Stop Trench structure for low saturation voltage
• Integrated high-speed Fast Recovery Diode
• High thermal stability up to 175°C

Applications

• Industrial motor drives
• Uninterruptible Power Supplies (UPS)
• Solar inverters

Procurement Notes

Verify the exact part number against official datasheets, as suffixes like 'TK' versus 'TS' may indicate specific internal revisions or packaging variations not always reflected in generic listings. Confirm RoHS compliance status and lead times directly with authorized distributors to ensure supply chain reliability and component authenticity.

Selection Notes

Select this component for applications requiring robust 650V switching capabilities with integrated freewheeling diodes. Ensure the thermal management design accommodates the 194 W dissipation rating. Verify that the gate drive requirements align with the standard IGBT specifications provided in the electrical characteristics table.

Part Context

This part belongs to the RGTH series of Field Stop Trench IGBTs from ROHM. These devices are designed for general-purpose industrial switching applications, offering a balance between conduction losses and switching speed. The TO-247 package facilitates efficient heat sinking for medium-power circuits.

Replacement Considerations

Check for direct substitutes such as the RGW60TS65DGC11 or other 650V 60A IGBTs in the same package family. Ensure pinout compatibility and similar electrical parameters before substitution.