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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 28A TO-3PFM
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：28 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 30A
- Power - Max：61 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：58 nC
- Td (on/off) @ 25°C：27ns/105ns
- Test Condition：400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3PFM, SC-93-3
- Supplier Device Package：TO-3PFM
- Grade：-
- Qualification：-
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Overview
The RGTH60TK65GC11 is a single IGBT from ROHM Semiconductor, utilizing Field Stop Trench technology in a TO-3PFM package. It features a collector-emitter breakdown voltage of 650 V and a continuous collector current of 50 A at 25°C. The device exhibits a typical collector-emitter saturation voltage of 2.1 V and a maximum power dissipation of 72 W. Designed for through-hole mounting, it operates within a junction temperature range of -40°C to +175°C. Key electrical characteristics include a gate-emitter voltage limit of ±30 V and a gate-emitter leakage current of 200 nA.
Feature Summary
- High-speed switching capability enabled by Field Stop Trench structure
- Low collector-emitter saturation voltage for reduced conduction loss
- Robust thermal performance with a maximum junction temperature of 175°C
Applications
- Power Factor Correction (PFC) circuits
- Solar inverters and photovoltaic systems
- Uninterruptible Power Supplies (UPS)
- Industrial welding equipment
- Induction Heating (IH) appliances
Procurement Notes
Verify the specific suffix 'GC11' against the official ROHM datasheet to confirm pinout compatibility and packaging details. Ensure the procurement channel provides genuine components with traceable lot codes. Cross-reference the RoHS compliance status and lead times directly with the manufacturer or authorized distributors before finalizing orders.
Selection Notes
Select this component for applications requiring high-speed switching and low conduction losses in the 650V class. Compare the 50A current rating and 72W power dissipation against system thermal constraints. Consider the TO-3PFM package for through-hole assembly requirements. Evaluate alternative models like the RGW series if different current or voltage ratings are needed.
Part Context
This part belongs to the ROHM RGTH series of high-speed IGBTs. It shares the Field Stop Trench architecture with other models in the lineup but differs in current handling and package type. The TO-3PFM variant offers distinct thermal and mechanical properties compared to the TO-247N packages found in similar-rated devices like the RGTH60TS65DGC11.
Replacement Considerations
The RGW60TK65DGVC11 is listed as a potential replacement in related documentation, though it carries an NRND status. Verify electrical equivalence and package compatibility before substitution. Other models in the RGW or RGTH families may serve as alternatives depending on specific current and voltage requirements.
