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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 58A TO-247N
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：58 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 30A
- Power - Max：194 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：58 nC
- Td (on/off) @ 25°C：27ns/105ns
- Test Condition：400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr)：58 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247N
- Grade：-
- Qualification：-
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Overview
The RGTH60TS65DGC11 is a single IGBT with an integrated Fast Recovery Diode (FRD) from ROHM Semiconductor. It utilizes Trench Field Stop technology for high-speed switching and low conduction loss. Key electrical parameters include a collector-emitter breakdown voltage of 650 V, a continuous collector current of 58 A at 25°C, and a maximum power dissipation of 194 W. The device features a typical saturation voltage of 1.6 V and a reverse recovery time of 58 ns. It operates within a junction temperature range of -40°C to 175°C and is housed in a TO-247N package.
Feature Summary
- Trench Field Stop structure for optimized switching performance
- Integrated fast recovery diode with soft recovery characteristics
- High short-circuit capability for robust operation
- Lead-free plating compliant with RoHS standards
Applications
- PFC circuits
- Solar inverters
- Uninterruptible Power Supplies (UPS)
- Welding equipment
- Induction Heating (IH)
Procurement Notes
Verify the specific ordering suffix against the manufacturer's latest datasheet to ensure correct packaging and lead times. Confirm that the component meets all required environmental compliance standards for the target application. Cross-reference the part number with official distributor catalogs to validate availability and authenticity before finalizing procurement orders.
Selection Notes
Select this component for applications requiring high-speed switching and low conduction losses in the 650V class. Ensure the thermal management design supports the 194 W power dissipation rating. Verify that the gate drive requirements align with the specified saturation voltage and switching characteristics. Consider the TO-247N package constraints for PCB layout and heatsinking integration.
Part Context
This part belongs to ROHM's RGTH series of high-speed IGBTs designed for general-purpose industrial and consumer electronics. It is distinct from automotive-grade variants like the RGA series by lacking specific AEC-Q101 qualification. The device serves as a standard-level solution for non-automotive power conversion systems where high efficiency and reliability are prioritized.
Replacement Considerations
Direct substitutes may include other ROHM models such as the RGW60TS65DGC11 or similar 650V/30A+ IGBTs in TO-247N packages. Verify pinout compatibility and electrical parameter margins before substitution. Alternative manufacturers should be evaluated based on matching switching speeds and thermal resistance values.
