RGTH60TS65DGC13

$5.30

Description：IGBT TRENCH FS 650V 58A TO-247
Series：-

SKU:b57706bc855e Category: Single IGBTs Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 58A TO-247
Series：-
Mfr：Rohm Semiconductor
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：58 A
Current - Collector Pulsed (Icm)：120 A
Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 30A
Power - Max：194 W
Switching Energy：-
Input Type：Standard
Gate Charge：58 nC
Td (on/off) @ 25°C：27ns/105ns
Test Condition：400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr)：58 ns
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247
Grade：-
Qualification：-

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RGTH60TS65DGC13

Overview

The RGTH60TS65DGC13 is a single IGBT from ROHM Semiconductor, utilizing Field Stop Trench technology. It features a 650 V collector-emitter breakdown voltage and a continuous collector current of 85 A at 25°C. The device has a maximum power dissipation of 277 W and operates within a junction temperature range of -40°C to +175°C. It is housed in a TO-247GE-3 through-hole package with three pins. The saturation voltage is typically 2.1 V, and the gate-emitter maximum voltage is rated at 30 V.

Feature Summary

Field Stop Trench structure for optimized switching performance
High thermal stability with extended operating temperature range
Robust packaging suitable for high-power applications

Applications

Insulated Gate Bipolar Transistor circuits
General purpose inverter designs
Welding equipment power stages

Procurement Notes

Verify the specific suffix against official datasheets, as variations like DGC11 or GC13 may exist. Confirm RoHS compliance status directly from the manufacturer's documentation. Ensure the TO-247GE-3 package dimensions match your PCB layout requirements before finalizing procurement decisions.

Selection Notes

Select this component for applications requiring 650V blocking capability and high current handling up to 85A. Consider the 2.1V saturation voltage for conduction loss calculations. Verify that the thermal management solution supports the 277W power dissipation rating under your specific operating conditions.

Part Context

This part belongs to ROHM's IGBT transistor lineup, specifically designed for general-purpose power switching. It utilizes silicon technology and is available in a tube package format. The product lifecycle status is listed as active, indicating ongoing manufacturing support.

Replacement Considerations

Check for direct substitutes within the same ROHM series, such as variants with different current ratings or package types. Cross-reference specifications with other manufacturers' 650V trench IGBTs if pin compatibility and electrical parameters align.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.