SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The RGTH80TS65DGC13 is a single N-channel Field Stop Trench IGBT manufactured by ROHM Semiconductor. It features an integrated Fast Recovery Diode (FRD) and operates with a maximum collector-emitter voltage of 650V. The device supports a continuous collector current of 40A at 100°C and withstands short-circuit conditions for a minimum duration of 5µs. Packaged in a TO-247GE housing, it offers a typical saturation voltage of 1.65V and a reverse recovery time of 55ns, ensuring low switching losses.
Verify the specific suffix 'GC13' to confirm the tube packaging configuration and RoHS compliance status. Ensure the procurement channel provides official datasheets matching the 650V/40A specifications. Confirm that the component meets automotive or industrial reliability standards if required for the target application environment.
Select this component when a robust short-circuit tolerance of 5µs is required alongside high-speed switching performance. The integrated FRD simplifies circuit design by eliminating external diode requirements. Consider the TO-247GE package for thermal management needs in medium-power applications.
This part belongs to ROHM's TS series of trench field-stop IGBTs designed for inverter applications. It complements other variants like RGT80TS65D by offering specific packaging and electrical characteristics tailored for modern power conversion systems requiring efficient energy handling.
Direct substitutes include RGT80TS65DGC13 and RGTH00TS65DGC13. Verify pinout compatibility and thermal resistance differences before substitution. Ensure the alternative part maintains the 5µs short-circuit rating and similar saturation voltage levels.