RGTH80TS65GC11

$4.43

Description：IGBT TRENCH FS 650V 70A TO-247N
Series：-

SKU:bfc091c9e6dd Category: Single IGBTs Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 70A TO-247N
Series：-
Mfr：Rohm Semiconductor
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：70 A
Current - Collector Pulsed (Icm)：160 A
Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 40A
Power - Max：234 W
Switching Energy：-
Input Type：Standard
Gate Charge：79 nC
Td (on/off) @ 25°C：34ns/120ns
Test Condition：400V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247N
Grade：-
Qualification：-

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RGTH80TS65GC11

Overview

The RGTH80TS65GC11 is a single N-channel Silicon IGBT manufactured by ROHM Semiconductor. It utilizes Field Stop Trench technology and is housed in a TO-247N-3 package for through-hole mounting. The device features a collector-emitter breakdown voltage of 650 V and a continuous collector current of 40 A at 25°C. Key electrical parameters include a typical collector-emitter saturation voltage of 1.5 V, a maximum gate-emitter voltage of ±30 V, and a leakage current of 200 nA. Power dissipation is rated at 234 W, with an operating temperature range from -40°C to +175°C.

Feature Summary

High-speed switching capability suitable for efficient power conversion applications.
Integrated fast recovery diode (FRD) built-in for simplified circuit design.
Low collector-emitter saturation voltage for reduced conduction losses.
Field Stop Trench structure providing robust performance and soft switching characteristics.

Applications

Power Factor Correction (PFC) circuits
Solar inverters and photovoltaic systems
Uninterruptible Power Supplies (UPS)
Induction Heating (IH) appliances

Procurement Notes

Verify the specific suffix 'GC11' against the official ROHM datasheet to confirm pinout compatibility and thermal characteristics. Ensure that the procurement channel provides original manufacturer documentation to validate authenticity. Cross-reference the RoHS compliance status and lead times with authorized distributors prior to finalizing orders.

Selection Notes

Select this component for designs requiring high-speed switching with integrated freewheeling diodes. Compare the 1.5 V saturation voltage and 40 A current rating against system requirements. Consider the TO-247N package for thermal management needs. Evaluate short-circuit tolerance if the application demands high fault protection capabilities.

Part Context

This part belongs to the RGTH series of high-speed IGBTs from ROHM. It shares the TO-247N form factor with models like RGW80TS65 but differs in internal trench architecture and switching speed specifications. It serves as a discrete power switch alternative to modules in medium-power industrial applications.

Replacement Considerations

Potential substitutes include the RGW80TS65GC11 or RGS80TS65HRC11. Verify pin compatibility and electrical parameter alignment before substitution. Note that automotive-qualified variants may require specific validation steps.