RGTV00TK65DGC11

$5.20

Description：IGBT TRENCH FS 650V 45A TO-3PFM
Series：-

SKU:53d468faf476 Category: Single IGBTs Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 45A TO-3PFM
Series：-
Mfr：Rohm Semiconductor
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：45 A
Current - Collector Pulsed (Icm)：200 A
Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 50A
Power - Max：94 W
Switching Energy：1.17mJ (on), 940µJ (off)
Input Type：Standard
Gate Charge：104 nC
Td (on/off) @ 25°C：41ns/142ns
Test Condition：400V, 50A, 10Ohm, 15V
Reverse Recovery Time (trr)：102 ns
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-3PFM, SC-93-3
Supplier Device Package：TO-3PFM
Grade：-
Qualification：-

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RGTV00TK65DGC11

Overview

The RGTV00TK65DGC11 is a single Field Stop Trench IGBT manufactured by ROHM Semiconductor, designed for high-efficiency power switching. It features a 650V collector-emitter breakdown voltage and supports a continuous collector current of 45A at 25°C, with a peak pulse current capability of 200A. The device exhibits a low saturation voltage of 1.9V at 50A and integrates a built-in fast recovery freewheeling diode (FRD) with a reverse recovery time of 102ns. With a maximum power dissipation of 94W in a TO-3PFM through-hole package, it operates within a junction temperature range of -40°C to +175°C.

Feature Summary

Integrates a built-in very fast and soft recovery freewheeling diode (FRD) for efficient commutation.
Features a Field Stop Trench structure that ensures low collector-emitter saturation voltage.
Provides robust short-circuit withstand capability to protect against fault conditions.
Utilizes a TO-3PFM through-hole package suitable for high-power thermal management.

Applications

Solar Inverter systems
Uninterruptible Power Supply (UPS)
Induction Heating (IH) equipment
Power Factor Correction (PFC) circuits

Procurement Notes

Verify the specific suffix 'C11' against the official ROHM datasheet to confirm packaging and tape-and-reel specifications. Ensure the ordering part number matches the exact electrical characteristics required for the target application. Cross-reference the manufacturer's latest documentation to confirm component status and any potential design changes or obsolescence notices prior to final procurement decisions.

Selection Notes

Select this component for applications requiring high-speed switching with integrated freewheeling diode functionality. The 650V rating and 45A continuous current make it suitable for medium-power industrial converters. Consider the 94W power dissipation limit and TO-3PFM thermal performance when designing heatsinking solutions. Verify gate charge requirements against the driver circuit capabilities to ensure optimal switching speed and efficiency.

Part Context

This component belongs to the ROHM RGTV series of 650V Field Stop Trench IGBTs. These devices are engineered specifically for high-efficiency power conversion applications. The series combines advanced trench gate technology with field stop structures to minimize conduction losses while maintaining fast switching speeds. The integration of a high-performance FRD simplifies circuit design by eliminating the need for external parallel diodes in many topologies.