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The RGTV60TS65GC11 is a single Field Stop Trench IGBT manufactured by ROHM Semiconductor, housed in a TO-247N package. It features a collector-emitter breakdown voltage of 650 V and a continuous collector current of 30 A at 25°C. The device has a typical saturation voltage of 1.5 V and a maximum power dissipation of 194 W. Operating junction temperature ranges from -40°C to +175°C.
Verify the specific suffix 'GC11' against official datasheets to confirm pinout and packaging details. Ensure thermal management solutions support the 194 W dissipation rating within the specified operating temperature range. Confirm RoHS compliance status with the supplier prior to procurement.
Select this component for applications requiring fast switching speeds and low conduction losses. The TO-247N package suits through-hole mounting for moderate power levels. Consider thermal resistance requirements when designing heatsinks for continuous operation near maximum ratings.
This part belongs to ROHM's high-speed switching IGBT series designed for general-purpose industrial applications. It utilizes trench gate and field stop structures to optimize switching performance and reduce losses compared to standard planar IGBTs.
The RGW60TS65GC11 is a related model within the same product family, offering similar specifications but may differ in exact electrical parameters or availability status.