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The RGTV60TS65GC13 is a field stop trench IGBT from ROHM Semiconductor, packaged in TO-247N. It features a collector-emitter voltage of 650V and a continuous collector current of 30A at 100°C. The device offers a typical saturation voltage of 1.5V and a turn-off time of 35ns. It supports a short-circuit withstand time of 2µs and operates within a junction temperature range of -55°C to 175°C.
Verify the specific suffix GC13 against the official datasheet to confirm package type and tape/reel or tube configuration. Ensure the component meets RoHS compliance requirements for your assembly process. Confirm that the 2µs short-circuit rating aligns with your protection circuit design limits. Check for any automotive qualification restrictions if used in vehicle applications.
Select this part for applications requiring fast switching speeds and moderate current handling up to 30A. The 650V rating suits standard industrial voltage levels. Consider the thermal management capabilities provided by the TO-247N package. Evaluate the trade-off between the low saturation voltage and switching losses for your specific frequency requirements.
This component belongs to ROHM's high-speed IGBT series designed for general-purpose power conversion. It utilizes field stop trench technology to optimize performance. The device is intended for use in various industrial and consumer electronics applications where efficient power switching is critical.
Direct substitutes include other ROHM field stop trench IGBTs with similar voltage and current ratings, such as the RGW60TS65GC11. Verify pinout compatibility and thermal characteristics before substitution.