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The RGTV80TK65DGVC11 is a single Field Stop Trench IGBT manufactured by ROHM Semiconductor. It features a maximum collector-emitter breakdown voltage of 650 V and a continuous collector current rating of 39 A at 25°C. The device has a typical collector-emitter saturation voltage of 1.5 V and a power dissipation capacity of 85 W. It includes a built-in Fast Recovery Diode (FRD) with a short-circuit withstand time of 2 µs. The component operates within a temperature range of -40°C to +175°C and is housed in a TO-3PFM package for through-hole mounting.
Verify the specific suffix DGVC11 against official ROHM documentation to confirm pinout, packaging quantity, and RoHS compliance status. Ensure the procurement channel provides valid traceability for automotive-grade or industrial-grade components. Confirm that the supplier holds authorized distribution rights to prevent counterfeit products. Check for any recent lifecycle notices regarding obsolescence or design changes before finalizing orders.
Select this component when a robust short-circuit protection mechanism is required alongside high-speed switching performance. The 2 µs withstand time makes it suitable for applications demanding rapid fault response. Consider the 650V rating and 39A current capacity for medium-power inverter designs. Evaluate thermal management requirements given the 85W power dissipation in the TO-3PFM package.
This part belongs to ROHM's TV series, specifically designed for inverter applications requiring short-circuit tolerance. It utilizes Field Stop Trench technology to balance low conduction losses with fast switching speeds. The integrated FRD simplifies circuit design by eliminating the need for external anti-parallel diodes in many configurations.
Public confirmed substitute part numbers are not available in the provided source material.