RGTV80TS65DGC13

$6.21

Description：IGBT TRENCH FS 650V 78A TO-247GE
Series：-

SKU:edd3752f7388 Category: Single IGBTs Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 78A TO-247GE
Series：-
Mfr：Rohm Semiconductor
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：78 A
Current - Collector Pulsed (Icm)：160 A
Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 40A
Power - Max：234 W
Switching Energy：1.02mJ (on), 710µJ (off)
Input Type：Standard
Gate Charge：81 nC
Td (on/off) @ 25°C：39ns/113ns
Test Condition：400V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr)：101 ns
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247GE
Grade：-
Qualification：-

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RGTV80TS65DGC13

Overview

The RGTV80TS65DGC13 is a Field Stop Trench IGBT manufactured by ROHM Semiconductor, housed in a TO-247GE package. It features an integrated Fast Recovery Diode (FRD) and supports a collector-emitter voltage of 650V with a continuous collector current of 40A at 100°C. The device offers a typical saturation voltage of 1.5V and a short circuit withstand time of 2μs. Key electrical parameters include a maximum power dissipation of 234W at 25°C case temperature, a gate-emitter threshold voltage range of 5.0V to 7.0V, and thermal resistance values of 0.64°C/W for the IGBT junction-to-case and 0.93°C/W for the diode junction-to-case.

Feature Summary

Low Collector-Emitter Saturation Voltage
High Speed Switching & Low Switching Loss
Short Circuit Withstand Time 2μs
Built-in Very Fast & Soft Recovery FRD

Applications

Solar Inverter
UPS
Welding
PFC

Procurement Notes

Verify the specific ordering code suffix GC13 to confirm the tube packaging format containing 450 units per reel. Ensure compliance with RoHS directives and lead-free plating requirements during procurement. Confirm that the component status remains active for new designs before placing orders, as specifications may be subject to change without notice.

Selection Notes

Select this component for applications requiring high-speed switching capabilities combined with robust short-circuit protection up to 2 microseconds. Consider the thermal resistance characteristics when designing heat sinks, noting the distinct junction-to-case values for the IGBT and the integrated diode. Ensure the gate drive circuitry can support the specified threshold voltage range for reliable turn-on and turn-off operations.

Part Context

This part belongs to ROHM's TV series of Field Stop Trench IGBTs designed specifically for inverter applications. It utilizes trench gate technology to achieve low on-state voltage and fast switching speeds. The integration of a soft recovery FRD reduces switching losses and electromagnetic interference, making it suitable for medium-power conversion systems.

Replacement Considerations

Direct substitutes are not explicitly listed in the provided documentation. When evaluating alternatives, match the 650V rating, 40A current capacity, TO-247GE package, and 2μs short circuit withstand time. Verify that any replacement also includes an integrated FRD with comparable reverse recovery characteristics.