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The RGTV80TS65GC11 is a single Field Stop Trench IGBT manufactured by ROHM Semiconductor. It features a 650V collector-emitter voltage rating and a continuous collector current of 40A at 25°C, housed in a TO-247N package. The device incorporates integrated fast recovery diode (FRD) technology for efficient switching. Key electrical parameters include a typical collector-emitter saturation voltage of 1.9V and a maximum gate-emitter voltage of ±30V. Designed for high-speed applications, it supports through-hole mounting with a power dissipation capacity suitable for industrial power conversion systems.
Verify the exact suffix GC11 to confirm RoHS compliance and lead-free plating status. Ensure the procurement channel provides original manufacturer documentation matching the ROHM Semiconductor datasheet. Confirm that the TO-247N package dimensions align with the target PCB footprint requirements before finalizing orders.
Select this component when a 650V rating and 40A continuous current are required in a standard TO-247N form factor. The integrated FRD makes it suitable for half-bridge configurations where synchronous rectification is needed. Consider the thermal resistance characteristics of the package for heat sink design in high-power density applications.
This part belongs to ROHM's high-speed IGBT lineup utilizing trench field-stop technology. It is designed to replace older generation devices in power electronics where efficiency and switching speed are critical. The product serves as a core switching element in modern AC/DC and DC/DC converters.
Direct substitutes may include other ROHM models within the same voltage and current class, such as the RGW series or RGT series, provided they match the TO-247N package and pinout configuration. Verify thermal and electrical compatibility before cross-referencing.