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The RGTVX6TS65DGC11 is a single trench field-stop IGBT manufactured by Rohm Semiconductor, housed in a TO-247N package. It features a collector-emitter breakdown voltage of 650 V and a continuous collector current of 80 A at 100°C. The device exhibits a typical collector-emitter saturation voltage of 1.5 V and a reverse recovery time of 34 ns for its built-in fast recovery diode. It supports a short-circuit withstand time of 2 µs and operates within a junction temperature range of -55°C to 175°C.
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout and electrical characteristics match the design requirements. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer before placing orders.
Select this component for applications requiring high efficiency through low conduction and switching losses. Ensure the thermal management solution can handle the power dissipation at the expected operating junction temperature. Verify that the gate drive voltage aligns with the specified parameters for optimal performance.
This part belongs to the RGTV series, which is designed for inverter applications with a focus on high reliability. The 'X' designation typically indicates specific short-circuit ruggedness features within the ROHM IGBT portfolio. It is classified as a standard-grade product not recommended for automotive use.
Direct substitutes include other ROHM trench field-stop IGBTs in the TO-247N package with similar 650V ratings, such as the RGTVX2TS65DGC11 or RGTVX6TS65D. Cross-brand replacements require careful verification of Vce(sat), switching times, and short-circuit ratings.