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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 45A TO-3PFM
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：45 A
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 50A
- Power - Max：89 W
- Switching Energy：1.18mJ (on), 960µJ (off)
- Input Type：Standard
- Gate Charge：141 nC
- Td (on/off) @ 25°C：52ns/180ns
- Test Condition：400V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3PFM, SC-93-3
- Supplier Device Package：TO-3PFM
- Grade：-
- Qualification：-
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Overview
The RGW00TK65GVC11 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by ROHM Semiconductor. It utilizes Field Stop Trench technology to achieve high-speed switching capabilities. The device features a collector-emitter maximum voltage of 650 V and a continuous collector current rating of 45 A at 25°C. It operates within a temperature range of -40°C to +175°C, with a power dissipation capacity of 89 W. The component is housed in a TO-3PFM-3 package designed for through-hole mounting.
Feature Summary
- Field Stop Trench structure for optimized switching performance
- High-speed switching characteristics suitable for efficient power conversion
- Integrated Fast Recovery Diode (FRD) functionality
Applications
- Power Factor Correction (PFC) circuits
- Solar inverters
- Uninterruptible Power Supplies (UPS)
- Industrial welding equipment
- Induction Heating (IH) systems
Procurement Notes
Verify the specific ordering suffix GVC11 against the manufacturer's latest datasheet to confirm packaging details and compliance status. Ensure that the procurement channel provides authentic components from ROHM Semiconductor or authorized distributors to prevent counterfeit risks. Confirm RoHS compliance requirements match the project specifications before finalizing orders.
Selection Notes
Select this component when designing circuits requiring 650V blocking capability with high-speed switching needs. The TO-3PFM package is suitable for applications demanding robust thermal management via direct mounting. Consider the 45A current rating and 89W power dissipation limits relative to the expected load conditions and ambient temperature constraints during system design.
Part Context
This IGBT belongs to the RGW series, which is characterized by high-speed switching and low saturation voltage. The series is engineered to balance low conduction loss with fast switching speeds, reducing overall switching losses. It represents a standard-grade product line intended for general industrial and commercial power electronics applications rather than automotive use.
Replacement Considerations
Direct pin-compatible replacements should be verified using official substitution guides. Cross-referencing parameters such as Vceo, Ic, and package dimensions is essential. No specific substitute part numbers are confirmed in the provided data.
