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The RGW00TS65DHRC11 is a Field Stop Trench IGBT manufactured by ROHM Semiconductor, designed for high-speed switching applications. It features a TO-247N-3 through-hole package and operates with a maximum collector-emitter voltage of 650 V. The device supports a continuous collector current of 88 A at 25°C and dissipates up to 326 W of power. Key electrical parameters include a collector-emitter saturation voltage of 2.1 V, a gate-emitter leakage current of 200 nA, and an operating temperature range from -40°C to +175°C. It holds AEC-Q101 qualification for automotive reliability.
Verify the specific suffix 'C11' against official ROHM documentation to confirm tube packaging and lead-free plating specifications. Ensure the component meets AEC-Q101 standards if used in automotive designs. Cross-reference datasheet revisions to confirm thermal resistance values match your heatsink design requirements before finalizing procurement.
Select this component when a single N-channel IGBT with integrated FRD is required for 650V systems. The TO-247N package suits high-current applications needing robust thermal performance. Consider the 2.1 V saturation voltage and switching speed trade-offs compared to other series members like the RGW60TS65GC11 for lower current needs.
This part belongs to the RGW series of Field Stop Trench IGBTs, which are engineered to balance low conduction loss with high-speed switching capabilities. The series targets efficiency improvements in power conversion systems by minimizing switching losses and voltage overshoot during operation.
The RGW00TS65DHR is listed as an alias for this part number. Verify pinout compatibility and thermal characteristics if substituting with other ROHM 650V IGBTs in the same package family.