RGW00TS65EHRC11

$8.23

Description：IGBT TRENCH FS 650V 96A TO-247N
Series：-

SKU:6f8307d2ac25 Category: Single IGBTs Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 96A TO-247N
Series：-
Mfr：Rohm Semiconductor
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：96 A
Current - Collector Pulsed (Icm)：200 A
Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 50A
Power - Max：254 W
Switching Energy：-
Input Type：Standard
Gate Charge：141 nC
Td (on/off) @ 25°C：50ns/183ns
Test Condition：400V, 25A, 10Ohm, 15V
Reverse Recovery Time (trr)：90 ns
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247N
Grade：-
Qualification：-

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RGW00TS65EHRC11

Overview

The RGW00TS65EHRC11 is a single silicon Field Stop Trench IGBT manufactured by ROHM Semiconductor, housed in a TO-247N package. It features an integrated Fast Recovery Diode (FRD) and supports a collector-emitter voltage of 650 V with a continuous collector current of 50 A at 25°C. The device exhibits a typical saturation voltage of 1.5 V and a turn-off time of 38 ns. Maximum power dissipation reaches 254 W, operating within a junction temperature range of -55°C to 175°C. This component meets the AEC-Q101 automotive grade standard.

Feature Summary

High-speed fast switching capability designed for efficient power conversion
Integrated FRD enables smooth soft-switching and reduced voltage overshoot
AEC-Q101 qualified for high reliability in automotive environments

Applications

On-board chargers (OBC)
DC/DC converters
Power factor correction (PFC) circuits
Industrial variable frequency motor drives

Procurement Notes

Verify the complete part number including suffixes against official ROHM documentation before ordering. Confirm that the specific revision matches design requirements. Check RoHS compliance status via the manufacturer's latest specification sheet. Ensure thermal management solutions align with the 254 W dissipation rating. Validate package dimensions against PCB footprint specifications.

Selection Notes

Select this component for applications requiring low conduction loss combined with rapid switching speeds. The built-in FRD simplifies circuit topology by eliminating external diodes. Consider the TO-247N package for through-hole mounting and robust heat sinking. Evaluate gate drive requirements against the specified switching characteristics.

Part Context

This device belongs to the ROHM RGW series, which utilizes trench gate and thin wafer technology to minimize both saturation voltage and switching losses. The series addresses the trade-off between conduction efficiency and switching speed, making it suitable for high-frequency power electronics designs.