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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 96A TO-247N
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：96 A
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 50A
- Power - Max：254 W
- Switching Energy：1.18mJ (on), 960µJ (off)
- Input Type：Standard
- Gate Charge：141 nC
- Td (on/off) @ 25°C：52ns/180ns
- Test Condition：400V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247N
- Grade：-
- Qualification：-
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Overview
The RGW00TS65GC11 is a single silicon Field Stop Trench IGBT manufactured by ROHM Semiconductor. It features a TO-247N-3 through-hole package with a maximum collector-emitter voltage (VCEO) of 650 V and a continuous collector current (Ic) of 50 A at 25°C. The device exhibits a typical collector-emitter saturation voltage (VCE(sat)) of 1.9 V and a power dissipation (Pd) of 89 W. Operating within a temperature range of -40°C to +175°C, it includes a gate-emitter leakage current of 200 nA and supports a maximum gate-emitter voltage of ±30 V.
Feature Summary
- Field Stop Trench technology for optimized switching performance
- High short-circuit withstand capability suitable for inverter applications
- Low collector-emitter saturation voltage for reduced conduction losses
Applications
- Power Factor Correction (PFC) circuits
- Solar inverters
- Uninterruptible Power Supplies (UPS)
- Industrial welding equipment
- Induction Heating (IH) systems
Procurement Notes
Verify the specific suffix GC11 against the official datasheet to confirm packaging and compliance details. Check the component lifecycle status, as older ROHM models may be marked as Not Recommended for New Designs (NRND). Confirm RoHS and REACH compliance requirements with the supplier before finalizing procurement orders.
Selection Notes
Select this component when a 650 V rating and 50 A continuous current are required in a TO-247N package. Ensure the thermal management design accommodates the 89 W power dissipation limit. Verify that the application does not require automotive qualification, as this standard industrial grade part lacks AEC-Q101 certification.
Part Context
This part belongs to the RGW series of high-speed switching IGBTs from ROHM Semiconductor. It utilizes trench gate and field stop technology to achieve low saturation voltage and fast switching speeds. The TO-247N package provides robust mechanical stability and efficient heat dissipation for medium-power industrial applications.
Replacement Considerations
Direct substitutes include other ROHM 650V 50A TO-247N IGBTs such as the RGW60TS65GC11 or RGTV00TS65GC11, provided the current rating and pinout compatibility are verified. Cross-brand replacements require matching VCEO, Ic, VCE(sat), and package dimensions.
