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The RGW40TK65DGVC11 is a single N-channel IGBT from ROHM Semiconductor, utilizing trench field-stop technology in a TO-3PFM package. It features a collector-emitter voltage of 650V and a continuous collector current of 20A at 100°C. The typical collector-emitter saturation voltage is 1.5V, with a turn-off time of 63ns. Power dissipation reaches 89W, operating between -55°C and 175°C storage temperatures.
Verify the specific suffix 'GVC11' against official datasheets to confirm RoHS compliance and tube packaging details. Confirm lead-free plating status and ensure the TO-3PFM footprint matches your PCB design requirements before finalizing orders.
Select this component for applications requiring fast switching speeds and low conduction losses. Ensure thermal management supports the 89W dissipation rating. Verify that the 650V blocking voltage exceeds peak circuit voltages under all operating conditions.
This device belongs to the RGW series, designed for high-efficiency power electronics. It integrates trench gate and field-stop technologies to optimize switching performance. The TO-3PFM package provides robust mechanical stability for through-hole mounting in industrial environments.
Check for direct pin-compatible alternatives within the same series. Verify that any substitute maintains identical voltage ratings, current capabilities, and thermal resistance values to ensure circuit compatibility without redesign.