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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 40A TO-247GE
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：80 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 20A
- Power - Max：136 W
- Switching Energy：330µJ (on), 300µJ (off)
- Input Type：Standard
- Gate Charge：59 nC
- Td (on/off) @ 25°C：33ns/76ns
- Test Condition：400V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247GE
- Grade：-
- Qualification：-
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Overview
The RGW40TS65GC13 is a single N-channel Field Stop Trench IGBT manufactured by ROHM Semiconductor. It features a TO-247N-3 package with through-hole mounting. The device supports a collector-emitter voltage (VCEO) of 650 V and a continuous collector current (IC) of 40 A at 25°C, reducing to 20 A at 100°C case temperature. Typical saturation voltage (VCE(sat)) is 1.5 V at 25°C and 1.85 V at 175°C for IC = 20 A, VGE = 15 V. Maximum power dissipation is 136 W at 25°C case temperature. Operating junction temperature ranges from -40°C to +175°C.
Feature Summary
- Field Stop Trench structure providing low collector-emitter saturation voltage
- High-speed switching capability with low switching loss and soft switching characteristics
- Lead-free plating compliant with RoHS standards
Applications
- Power Factor Correction (PFC)
- Uninterruptible Power Supplies (UPS)
- Solar Inverters
- Welding equipment
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging details. The datasheet references packing code C11 associated with tube packaging. Confirm availability status directly with the manufacturer or authorized distributors as product lifecycle stages may change. Ensure compliance with environmental directives such as RoHS before procurement.
Selection Notes
Select this component based on the required 650V blocking voltage and 40A continuous current rating. Consider thermal management requirements given the 136W power dissipation limit at 25°C case temperature. Verify gate drive conditions, ensuring VGE remains above 10V to prevent thermal runaway. Check switching energy losses against system frequency requirements using the provided characteristic curves.
Part Context
This part belongs to the RGW40TS65 series of Field Stop Trench IGBTs from ROHM Semiconductor. It shares the same electrical specifications and physical outline as the RGW40TS65GC11 variant, differing primarily in packaging configuration. The series is designed for high-efficiency power conversion applications requiring robust performance at high temperatures.
Replacement Considerations
The RGW40TS65GC11 is an electrically equivalent alternative within the same series. Verify that the packaging type matches the board layout requirements, as differences exist between tube and tape-and-reel configurations. Ensure thermal resistance and pinout compatibility are identical for direct substitution.
