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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 30A TO-3PFM
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：30 A
- Current - Collector Pulsed (Icm)：100 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 25A
- Power - Max：67 W
- Switching Energy：390µJ (on), 430µJ (off)
- Input Type：Standard
- Gate Charge：73 nC
- Td (on/off) @ 25°C：35ns/102ns
- Test Condition：400V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr)：92 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3PFM, SC-93-3
- Supplier Device Package：TO-3PFM
- Grade：-
- Qualification：-
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Overview
The RGW50TK65DGVC11 is a single-channel Field Stop Trench IGBT manufactured by ROHM Semiconductor. It features an integrated Fast Recovery Diode (FRD) and utilizes silicon technology for high-speed switching applications. The device is housed in a TO-3PFM-3 through-hole package. Key electrical parameters include a maximum collector-emitter voltage of 650 V, a continuous collector current of 30 A at 25°C, and a typical collector-emitter saturation voltage of 1.9 V. Maximum power dissipation is rated at 67 W, with an operating temperature range from -40°C to +175°C.
Feature Summary
- High-speed fast switching type utilizing Field Stop Trench IGBT technology
- Integrated built-in FRD for simplified circuit design
- Low collector-emitter saturation voltage for reduced conduction loss
Applications
- Power Factor Correction (PFC) circuits
- Solar inverters
- Uninterruptible Power Supplies (UPS)
- Welding equipment
- Induction Heating (IH) appliances
Procurement Notes
Verify the specific ordering suffix 'C11' against the manufacturer's datasheet to confirm packaging details and compliance status. Ensure that the TO-3PFM-3 package dimensions match the target PCB footprint requirements before finalizing procurement decisions.
Selection Notes
Select this component when a single IGBT with an integrated anti-parallel diode is required for high-voltage, high-speed switching applications. The 650V rating suits general industrial power conversion, while the TO-3PFM package facilitates thermal management via direct mounting to heatsinks.
Part Context
This part belongs to the RGW series of high-speed IGBTs designed for efficiency in power electronics. The 'W' designation indicates high-speed fast switching characteristics. It is distinct from lower-current variants like the RGW00TK65 or higher-current models within the same voltage class.
Replacement Considerations
The part number alias RGW50TK65D may refer to the same core device without specific packaging suffixes. Verify pinout compatibility and thermal resistance specifications when considering alternative suppliers or updated revisions.
