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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 50A TO-247N
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：50 A
- Current - Collector Pulsed (Icm)：100 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 25A
- Power - Max：156 W
- Switching Energy：390µJ (on), 430µJ (off)
- Input Type：Standard
- Gate Charge：73 nC
- Td (on/off) @ 25°C：35ns/102ns
- Test Condition：400V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247N
- Grade：-
- Qualification：-
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Overview
The RGW50TS65GC11 is a single silicon Field Stop Trench IGBT manufactured by ROHM Semiconductor. It features a TO-247N-3 through-hole package with a maximum collector-emitter voltage of 650 V and a continuous collector current of 25 A at 100°C. The device exhibits a typical collector-emitter saturation voltage of 1.5 V and a turn-off time of 53 ns. Power dissipation reaches 89 W, operating within a temperature range of -55°C to 175°C storage and -40°C to 175°C junction.
Feature Summary
- High-speed fast switching capability for efficient power conversion
- Low collector-emitter saturation voltage reducing conduction losses
- Soft switching characteristics minimizing voltage overshoot during transitions
Applications
- Power Factor Correction (PFC) circuits
- Solar inverters
- Uninterruptible Power Supplies (UPS)
- Industrial welding equipment
- Induction Heating (IH) systems
Procurement Notes
Verify the specific suffix GC11 against official datasheets to confirm packaging and compliance details. Confirm end-of-life status as some variants in this series are marked NRND. Ensure thermal management aligns with the 89 W dissipation rating. Check RoHS compliance documentation before integration. Validate lead plating specifications for soldering processes.
Selection Notes
Select this component when low conduction loss and high switching speed are required simultaneously. The TO-247N-3 package suits high-current applications needing robust thermal performance. Consider the 1.5 V saturation voltage for efficiency optimization. Evaluate the 53 ns turn-off time for high-frequency operation requirements. Ensure gate drive voltages remain within the specified limits.
Part Context
This part belongs to the RGTV/RGW series designed to resolve conflicts between low conduction loss and fast switching. It utilizes Field Stop Trench technology for improved efficiency. The series targets general-purpose industrial and consumer electronics applications. It is distinct from automotive-grade variants lacking AEC-Q101 qualification.
Replacement Considerations
Direct substitutes require matching 650V/25A ratings and TO-247N-3 packages. Verify switching times and saturation voltages for equivalent performance. Check if alternative parts offer similar soft-switching benefits. Ensure pinout compatibility for direct replacement without PCB redesign.
