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The RGW60NL65HRBTL is a single N-channel Field Stop Trench IGBT manufactured by ROHM Semiconductor. It features a TO-263-3 (LPDL) surface-mount package designed for high-speed switching applications. The device supports a maximum collector-emitter voltage of 650 V and a continuous collector current of 67 A at 25°C. Key electrical parameters include a typical collector-emitter saturation voltage of 1.9 V, a gate-emitter maximum voltage of 30 V, and a power dissipation rating of 187 W. The component operates within a temperature range of -40°C to +175°C and exhibits a gate-emitter leakage current of 200 nA.
Verify the specific suffix BTL indicates reel packaging when sourcing components. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Ensure the supplier provides valid traceability data for automotive-grade parts. Cross-reference the full part number against the latest datasheet to confirm pinout and thermal specifications match the design requirements.
Select this component for designs requiring high current handling in a compact surface-mount footprint. The 650V rating suits medium-voltage power conversion systems. Consider the 1.9V saturation voltage for efficiency optimization in conduction-heavy applications. Verify thermal management capabilities align with the 187W dissipation rating under expected operating conditions.
This part belongs to ROHM's RGW series of high-speed fast switching IGBTs. The series utilizes Field Stop Trench technology to balance low conduction losses with rapid switching speeds. The LPDL package variant offers improved thermal performance compared to standard TO-263 packages, making it suitable for dense automotive and industrial power electronics layouts.
The RGW60NL65HRB is listed as an alias or related part number. Verify if the non-BTL suffix denotes tape-and-reel versus cut-tape packaging rather than functional differences. Check for equivalent devices from other manufacturers offering similar 650V/67A ratings in TO-263-3 packages.