RGW60TS65DGC13

Overview

The RGW60TS65DGC13 is a Field Stop Trench IGBT manufactured by ROHM Semiconductor, housed in a TO-247N package. It features an integrated Fast Recovery Diode (FRD) and supports a collector-emitter voltage of 650V with a continuous collector current of 30A at 100°C. The typical collector-emitter saturation voltage is 1.5V, and power dissipation reaches 178W at 25°C case temperature. Operating junction temperatures range from -40°C to +175°C.

Feature Summary

• Field Stop Trench structure for low saturation voltage
• Integrated very fast and soft recovery FRD
• High-speed switching capability with low switching loss

Applications

• Welding equipment
• Solar inverters
• Power Factor Correction (PFC)
• Uninterruptible Power Supplies (UPS)

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. The C11 suffix indicates tube packaging with a basic ordering unit of 450 pieces. Confirm RoHS compliance status directly with the manufacturer or authorized distributors before procurement.

Selection Notes

Select this component for applications requiring high-speed switching and soft recovery characteristics. Ensure gate drive voltage remains above 10V to prevent thermal runaway. Verify that the thermal management design accommodates the specified power dissipation limits across the operating temperature range.

Part Context

This device belongs to the RGW series of 650V Field Stop Trench IGBTs from ROHM. It utilizes trench gate technology to achieve lower on-state losses compared to planar structures. The integrated FRD eliminates the need for external anti-parallel diodes in bridge configurations.

Replacement Considerations

Direct substitutes require matching 650V rating, TO-247N package, and similar current handling capabilities. Verify pinout compatibility and thermal resistance values when considering alternative manufacturers' components.