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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 64A TO-247N
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：64 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 30A
- Power - Max：178 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：84 nC
- Td (on/off) @ 25°C：36ns/107ns
- Test Condition：400V, 15A, 10Ohm, 15V
- Reverse Recovery Time (trr)：87 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247N
- Grade：-
- Qualification：-
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Overview
The RGW60TS65DHRC11 is a single-channel Field Stop Trench IGBT manufactured by ROHM Semiconductor, designed for high-speed fast switching applications. It features a 650 V collector-emitter breakdown voltage and a continuous collector current of 30 A at 100°C. The device incorporates an integrated Fast Recovery Diode (FRD) with a typical reverse recovery time of 58 ns. Key electrical parameters include a maximum collector-emitter saturation voltage of 1.9 V, a gate-emitter voltage limit of ±30 V, and a power dissipation rating of 178 W. It operates within a junction temperature range of -40°C to +175°C and is housed in a TO-247N-3 through-hole package.
Feature Summary
- Field Stop Trench technology enables low saturation voltage and reduced switching losses.
- Integrated FRD provides very fast and soft recovery characteristics.
- Soft switching capability reduces voltage overshoot during operation.
Applications
- On-board chargers (OBC)
- Totem-pole PFC circuits
- DC/DC converters
- Industrial inverters
Procurement Notes
Verify the specific suffix 'C11' against the manufacturer's datasheet to confirm packaging details and RoHS compliance status. Ensure the ordering part number matches the exact component variant required for your design, as suffixes may indicate differences in tape-and-reel quantities or lead plating specifications.
Selection Notes
Select this component when a balance of low conduction loss and high-speed switching is required for 650V systems. The integrated FRD simplifies circuit design by eliminating the need for external anti-parallel diodes. Verify that the thermal management solution can handle the 178 W power dissipation rating under worst-case operating conditions.
Part Context
This device belongs to the ROHM Series W, which utilizes trench gate and thin wafer technologies to minimize the trade-off between conduction and switching losses. The Series W is characterized by its ability to achieve both low VCE(sat) and high-speed switching, making it suitable for efficient power conversion topologies.
Replacement Considerations
The RGW60TS65DGC11 is listed as a recommended product alternative. Verify pin compatibility and electrical parameter equivalence before substitution. Other Series W devices in the TO-247N package may serve as functional replacements if current ratings align.
