RGW80TK65DGVC11

Overview

The RGW80TK65DGVC11 is a single-channel Field Stop Trench IGBT manufactured by ROHM Semiconductor. It features an integrated Fast Recovery Diode (FRD) and utilizes silicon technology in a TO-3PFM package for through-hole mounting. The device supports a maximum collector-emitter voltage of 650 V and a continuous collector current of 39 A at 25°C. Key electrical parameters include a typical collector-emitter saturation voltage of 1.9 V, a gate-emitter leakage current of 200 nA, and a power dissipation rating of 81 W. It operates within a junction temperature range of -40°C to +175°C.

Feature Summary

• Field Stop Trench structure designed for high-speed fast switching applications
• Integrated FRD with soft recovery characteristics to minimize switching losses
• Low collector-emitter saturation voltage for improved conduction efficiency

Applications

• Power Factor Correction (PFC) circuits
• Solar inverters and photovoltaic systems
• Uninterruptible Power Supplies (UPS)
• Industrial welding equipment
• Induction Heating (IH) appliances

Procurement Notes

Verify the specific ordering suffix to ensure compatibility with required packaging formats, as tube quantities may vary. Confirm RoHS compliance status directly with the manufacturer or authorized distributors before finalizing procurement plans. Check for any end-of-life notifications or recommended new design alternatives if sourcing for long-term production runs.

Selection Notes

Select this component when low switching loss and high-speed performance are critical for system efficiency. Ensure the thermal management solution can handle the 81 W power dissipation rating under worst-case operating conditions. Verify that the drive circuit provides the appropriate gate voltage levels to fully utilize the low saturation voltage characteristics without exceeding the 30 V maximum gate-emitter voltage limit.

Part Context

This part belongs to the ROHM RGW series, which focuses on high-speed fast switching IGBTs. The series is engineered to reduce both turn-off and reverse recovery times, making it suitable for high-frequency power conversion topologies. It represents a standard-grade product line intended for general industrial and consumer electronics applications rather than automotive-grade environments.

Replacement Considerations

Direct substitutes within the same family include the RGW80TK65EGVC11, which shares similar electrical ratings but may differ in specific switching time parameters. Engineers should compare datasheet values for $t_{off}$ and $Q_{rr}$ to ensure equivalent performance in existing designs.