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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 39A TO-3PFM
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：39 A
- Current - Collector Pulsed (Icm)：160 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 40A
- Power - Max：81 W
- Switching Energy：760µJ (on), 720µJ (off)
- Input Type：Standard
- Gate Charge：110 nC
- Td (on/off) @ 25°C：44ns/143ns
- Test Condition：400V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3PFM, SC-93-3
- Supplier Device Package：TO-3PFM
- Grade：-
- Qualification：-
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Overview
The RGW80TK65GVC11 is a single-channel silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by ROHM Semiconductor. It utilizes Field Stop Trench technology and integrates a Fast Recovery Diode (FRD). The device features a maximum collector-emitter voltage of 650 V and a continuous collector current of 39 A at 25°C. Typical saturation voltage is 1.9 V, with a gate-emitter maximum voltage of 30 V. Power dissipation reaches 81 W in a TO-3PFM-3 package. Operating temperatures range from -40°C to +175°C, with a leakage current of 200 nA.
Feature Summary
- High-speed fast switching capability utilizing Field Stop Trench IGBT structure
- Integrated built-in FRD for efficient circuit design
- Low collector-emitter saturation voltage for reduced conduction loss
Applications
- Power Factor Correction (PFC) circuits
- Solar inverters
- Uninterruptible Power Supplies (UPS)
- Welding equipment
- Induction Heating (IH)
Procurement Notes
Verify the specific suffix GVC11 against official datasheets to confirm pinout and thermal characteristics. Confirm RoHS compliance status through manufacturer documentation. Ensure ordering quantities align with tube packaging requirements specified by ROHM. Validate that the component meets functional safety standards required for the target application environment before procurement.
Selection Notes
Select this component for applications requiring high-speed switching and integrated freewheeling diodes. Compare saturation voltage and switching times against alternative IGBTs to ensure compatibility with drive circuits. Consider the TO-3PFM package size for thermal management and PCB layout constraints. Verify that the 650V rating provides sufficient margin for the system's peak voltage conditions.
Part Context
This part belongs to ROHM's Series W, characterized by high-speed fast switching performance. It is designed as a standard-grade product suitable for general industrial electronics. The model is distinct from automotive-qualified variants, which typically carry different suffixes or series designations. It serves as a core switching element in power conversion topologies.
Replacement Considerations
The RGW80TK65E is listed as an alias for this component. When sourcing substitutes, verify that any replacement maintains the same TO-3PFM footprint and electrical parameters. Cross-reference with other Series W IGBTs if higher current ratings are needed, ensuring thermal resistance remains within acceptable limits.
