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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 78A TO-247N
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：78 A
- Current - Collector Pulsed (Icm)：160 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 40A
- Power - Max：214 W
- Switching Energy：760µJ (on), 720µJ (off)
- Input Type：Standard
- Gate Charge：110 nC
- Td (on/off) @ 25°C：44ns/143ns
- Test Condition：400V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr)：92 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247N
- Grade：-
- Qualification：-
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Overview
The RGW80TS65DGC11 is a single N-channel IGBT from ROHM Semiconductor, utilizing Trench Field Stop technology in a TO-247N-3 package. It features a collector-emitter breakdown voltage of 650 V and a continuous collector current of 40 A at 100°C. The device exhibits a typical collector-emitter saturation voltage of 1.5 V and a reverse recovery time of 34 ns for its built-in Fast Recovery Diode (FRD). Power dissipation is rated at 214 W, with an operating junction temperature range spanning from -40°C to +175°C.
Feature Summary
- Trench Field Stop structure enables high-speed switching with low switching losses.
- Integrated Fast Recovery Diode provides very fast and soft recovery characteristics.
- Low collector-emitter saturation voltage contributes to reduced conduction losses.
Applications
- Power Factor Correction (PFC) circuits
- Solar inverters
- Uninterruptible Power Supplies (UPS)
- Inverter Heating (IH) appliances
Procurement Notes
Verify the specific ordering suffix against the manufacturer's latest datasheet to ensure correct packaging and compliance status. Confirm that the component meets all relevant RoHS standards before integration into final assemblies. Cross-reference the part number with official distributor catalogs to validate current production status and availability constraints.
Selection Notes
Select this component for designs requiring high-speed switching capabilities within a 650 V system. Ensure thermal management solutions can handle the 214 W power dissipation rating under expected load conditions. Verify that gate drive voltages remain within the specified limits to maintain reliable operation and prevent device degradation during high-frequency switching cycles.
Part Context
This part belongs to the RGW series of high-speed IGBTs designed for efficiency improvements in power conversion systems. It shares the TO-247N-3 form factor with other devices in the family but offers distinct electrical parameters tailored for applications demanding rapid switching speeds and integrated freewheeling diode performance.
Replacement Considerations
The RGW80TS65D is listed as a related variant within the same product line. Verify pin compatibility and electrical specifications before substitution. No other public substitute part numbers are confirmed for direct replacement.
