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The RGWS60TS65DGC13 is a single Field Stop Trench IGBT manufactured by ROHM Semiconductor, housed in a TO-247GE three-pin through-hole package. It features a maximum collector-emitter voltage (VCEO) of 650 V and a continuous collector current (Ic) of 30 A at 25°C. The device exhibits a typical collector-emitter saturation voltage (VCE(sat)) of 1.6 V and a maximum power dissipation (Pd) of 156 W. Operating within a temperature range of -40°C to +175°C, it includes a built-in fast recovery diode and complies with RoHS standards.
Verify component authenticity against official ROHM documentation before integration. Confirm the specific suffix GC13 matches design requirements, as packaging quantities may vary. Check for end-of-life status or alternative sourcing options due to potential supply constraints.
Select this component for applications requiring high-speed switching with low conduction losses. Ensure the thermal management system supports the 156 W power dissipation rating. Verify that the 650 V voltage rating provides adequate margin for the target circuit's peak transient voltages.
This part belongs to the RGWS series, characterized by high-speed switching capabilities and cost-effectiveness. It utilizes silicon technology and is designed for robust performance in industrial power conversion environments, distinguishing itself from standard trench IGBTs through its field stop structure.
Direct substitutes are not explicitly confirmed in public data. Evaluate other ROHM RGWS series variants with matching 650 V and 30 A ratings, ensuring pin compatibility and similar VCE(sat) specifications.