ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 71A TO-247G
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：71 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 40A
- Power - Max：202 W
- Switching Energy：700µJ (on), 660µJ (off)
- Input Type：Standard
- Gate Charge：83 nC
- Td (on/off) @ 25°C：40ns/114ns
- Test Condition：400V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247G
- Grade：-
- Qualification：-
Download product information
Overview
The RGWS80TS65GC13 is a single silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by ROHM Semiconductor. It utilizes trench gate technology and is housed in a TO-247GE-3 through-hole package. The device supports a maximum collector-emitter voltage of 650 V and a continuous collector current of 71 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2 V, a gate-emitter maximum voltage of ±30 V, and a power dissipation rating of 202 W. The component operates within a temperature range of -40°C to +175°C.
Feature Summary
- Single configuration IGBT utilizing trench gate technology for efficient switching performance.
Applications
- General purpose inverter circuits
- Industrial motor drives
- Power supply systems
Procurement Notes
Verify the specific suffix GC13 against the manufacturer's latest datasheet to confirm packaging details and compliance status. Ensure that the TO-247GE-3 pinout matches the target PCB footprint design. Confirm RoHS compliance requirements with the supplier prior to ordering.
Selection Notes
Select this component when a 650V rated single IGBT with a 71A continuous current capacity is required. The TO-247GE-3 package provides robust thermal management capabilities suitable for high-power applications. Verify that the 2V saturation voltage meets the efficiency targets of the specific circuit design.
Part Context
This part belongs to the ROHM RGWS series of trench gate IGBTs. These devices are designed for general-purpose switching applications requiring reliable performance in medium-to-high power environments. The series offers a balance of low conduction losses and manageable switching characteristics.
Replacement Considerations
The RGWS80TS65DGC13 is a related variant within the same series offering different switching characteristics. Cross-reference electrical parameters such as saturation voltage and short-circuit withstand time before substitution.
