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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 104A TO-247G
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：104 A
- Current - Collector Pulsed (Icm)：180 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 60A
- Power - Max：288 W
- Switching Energy：1.43mJ (on), 1.2mJ (off)
- Input Type：Standard
- Gate Charge：140 nC
- Td (on/off) @ 25°C：55ns/180ns
- Test Condition：400V, 60A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247G
- Grade：-
- Qualification：-
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Overview
The RGWSX2TS65GC13 is a single silicon Field Stop Trench IGBT manufactured by ROHM Semiconductor. It features a TO-247GE-3 package with through-hole mounting. The device supports a collector-emitter voltage of 650 V and a continuous collector current of 60 A at 100°C. Typical saturation voltage is 1.6 V, with a maximum gate-emitter voltage of ±30 V. Power dissipation reaches 288 W within an operating temperature range of -55°C to 175°C. The component utilizes Pb-free lead plating and complies with RoHS standards.
Feature Summary
- High-speed switching capability optimized for cost-effective performance
- Low collector-emitter saturation voltage for reduced conduction loss
- Soft switching characteristics minimizing electromagnetic interference
- Field Stop Trench technology ensuring low switching losses
Applications
- Power Factor Correction (PFC) circuits
- Solar power converters
- Medium to high-speed switching frequency converters
Procurement Notes
Verify the specific suffix GC13 against official datasheets to confirm tube packaging and RoHS compliance status. Confirm the manufacturer's long-term supply plan duration before initiating production orders. Ensure thermal management designs accommodate the specified 288 W power dissipation rating under actual operating conditions.
Selection Notes
Select this component when high-speed switching and low conduction losses are required in 650 V applications. Compare the 1.6 V typical saturation voltage against alternative models if lower on-state voltage is critical. Verify that the TO-247GE-3 package dimensions fit the target PCB layout constraints.
Part Context
This part belongs to the WS series of ROHM IGBTs, characterized by high-speed switching and cost-effectiveness. It complements other 650 V trench field-stop devices like the RGWS80TS65GC13, offering a balance between switching speed and conduction efficiency for general-purpose industrial power electronics.
Replacement Considerations
Direct substitutes include the RGWSX2TS65DGC13. Evaluate the RGWS80TS65GC13 for higher current requirements or the RGW60TS65GC11 for legacy compatibility, noting differences in package type and current ratings.
