RGWX5TS65DGC13

$7.59

Description：IGBT TRENCH FS 650V 132A TO247GE
Series：-

SKU:f4abc1ed7999 Category: Single IGBTs Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 132A TO247GE
Series：-
Mfr：Rohm Semiconductor
Package：Bulk
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：132 A
Current - Collector Pulsed (Icm)：300 A
Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 75A
Power - Max：348 W
Switching Energy：2.39mJ (on), 1.68mJ (off)
Input Type：Standard
Gate Charge：213 nC
Td (on/off) @ 25°C：64ns/229ns
Test Condition：400V, 75A, 10Ohm, 15V
Reverse Recovery Time (trr)：101 ns
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247GE
Grade：-
Qualification：-

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RGWX5TS65DGC13

Overview

The RGWX5TS65DGC11 is a Field Stop Trench IGBT manufactured by ROHM Semiconductor, housed in a TO-247N package. It features an integrated Fast Recovery Diode (FRD). Key electrical parameters include a collector-emitter voltage of 650V and a continuous collector current of 75A at 100°C. The typical collector-emitter saturation voltage is 1.5V at 25°C. Power dissipation reaches 348W at 25°C case temperature. The device operates within a junction temperature range of -40°C to +175°C.

Feature Summary

Low Collector-Emitter Saturation Voltage
High Speed Switching Capability
Built-in Very Fast & Soft Recovery FRD

Applications

Solar Inverters
Uninterruptible Power Supplies (UPS)
Power Factor Correction (PFC)

Procurement Notes

Verify the specific ordering suffix against official documentation before procurement. Confirm that the component matches the required RoHS compliance standards for your region. Ensure thermal management designs account for the specified power dissipation limits at maximum operating temperatures. Cross-reference the datasheet revision date with your design requirements to ensure parameter stability.

Selection Notes

Select this component for applications requiring high-speed switching and low conduction losses. Consider the thermal resistance values when designing heat sinks. Verify gate drive voltage compatibility, as operation below 10V may cause thermal runaway. Evaluate the short-circuit withstand capability if protection circuits are not instantaneous.

Part Context

This part belongs to the RGW series of high-speed switching IGBTs from ROHM. It utilizes Field Stop Trench technology to optimize switching performance and conduction characteristics. The series is designed for efficiency in power conversion systems, offering a balance between low saturation voltage and fast recovery diode performance.

Replacement Considerations

Check for direct pin-compatible alternatives within the same manufacturer's portfolio. Verify that any substitute maintains the same voltage rating, current capacity, and package dimensions. Ensure the replacement also includes an integrated FRD if the original circuit design relies on it.