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The RGWX5TS65DHRC11 is a Field Stop Trench IGBT manufactured by ROHM Semiconductor, designed for high-efficiency power switching applications. It features a TO-247N-3 through-hole package and supports a maximum collector-emitter voltage (VCEO) of 650 V. The device provides a continuous collector current of 75 A at 25°C with a typical saturation voltage of 1.9 V. Key electrical parameters include a gate-emitter leakage current of 200 nA and a maximum power dissipation of 348 W. It operates within a temperature range of -40°C to +175°C junction temperature.
Verify the exact part number suffix against official ROHM documentation, as variations exist within the RGW series. Confirm RoHS compliance status and specific packaging quantities directly with authorized distributors or the manufacturer. Ensure the component meets the required AEC-Q101 automotive grade specifications if intended for vehicle applications.
Select this component when designing systems requiring a balance between low saturation voltage and high-speed switching. The TO-247N package suits applications needing robust thermal management via heatsinking. Consider the 650V rating and 75A current capacity relative to the specific load requirements and operating temperature constraints of the target circuit design.
This device belongs to the ROHM RGTV/RGW series, which utilizes Field Stop Trench technology to eliminate the trade-off between low conduction loss and switching speed. The series is engineered for high efficiency in power conversion systems, offering improved soft-switching performance compared to standard trench IGBTs.
Direct substitutes within the same series include RGWX5TS65HRC11 and RGAX5TS65HRC11. Verify pinout compatibility and specific electrical parameter tolerances before substitution. Cross-reference datasheets to ensure equivalent thermal resistance and switching energy values.