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The RGWX5TS65HRC11 is a single N-channel Field Stop Trench IGBT manufactured by ROHM Semiconductor. It features a TO-247N-3 through-hole package and operates with a maximum collector-emitter voltage of 650 V. The device supports a continuous collector current of 132 A at 25°C, with a typical saturation voltage of 1.9 V. Power dissipation reaches 348 W, while the gate-emitter withstand voltage is rated at ±30 V. It functions within a temperature range of -40°C to +175°C junction temperature and includes a 200 nA gate-emitter leakage current specification.
Verify component authenticity against official ROHM documentation before integration. Confirm that the specific suffix C11 matches the required tube packaging configuration. Ensure thermal management designs accommodate the specified power dissipation limits under actual operating conditions.
Select this component when high-speed switching and low saturation voltage are required simultaneously. The soft-switching feature helps minimize electromagnetic interference and design complexity. Verify that the 650V rating aligns with the system's peak voltage requirements and that the TO-247N package fits the available board space.
This part belongs to the RGW series, which utilizes Field Stop Trench IGBT technology. The series is designed to balance low conduction losses with fast switching speeds, addressing traditional trade-offs in IGBT performance. It serves as a high-reliability solution for both automotive and industrial power electronics applications.
Check for direct substitutes within the same RGW family or other ROHM 650V trench IGBTs with similar current ratings. Ensure any replacement maintains the TO-247N footprint and meets AEC-Q101 requirements if used in automotive contexts.