RHK003N06T146

$0.52

Description：MOSFET N-CH 60V 300MA SMT3
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:2da9a082fc3a Category: Single FETs, MOSFETs Brand: Rohm Semiconductor

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

RHK003N06T146 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is MOSFET N-CH 60V 300MA SMT3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for RHK003N06T146

Description：MOSFET N-CH 60V 300MA SMT3
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
Rds On (Max) @ Id, Vgs：1Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：6 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：33 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：200mW (Ta)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SMT3
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for RHK003N06T146

RHK003N06T146

Single FETs, MOSFETs Overview

The RHK003N06T146 is a silicon N-channel MOSFET designed for low-voltage switching applications. It features a 4V drive capability and low on-resistance, making it suitable for efficient power management in compact designs. The device operates with a drain-source voltage of 60V and supports a continuous drain current of 300mA. Packaged in the SMT3 (TO-236) surface-mount format, it integrates body diode functionality and includes ESD protection diodes. Key electrical parameters include a gate threshold voltage range of 1.0V to 2.5V and a maximum static drain-source on-state resistance of 1.5Ω at VGS=4V.

Single FETs, MOSFETs Feature Summary

Low on-resistance for improved efficiency
Optimized for 4V drive operation
Integrated body diode and ESD protection

Single FETs, MOSFETs Applications

Audio visual equipment
Office automation equipment
Communications devices
Electronic toys

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix T146 to confirm the taping packaging configuration and basic unit quantity of 3000 pieces. Ensure compatibility with standard SMT3 land patterns during PCB layout. Confirm that the application environment remains within the specified absolute maximum ratings for channel temperature and storage conditions to maintain device reliability.

Single FETs, MOSFETs Selection Notes

Select this component when a small form factor N-channel MOSFET with 4V logic-level drive is required. The SMT3 package suits space-constrained designs. Verify that the load current does not exceed the 300mA continuous limit and that the operating voltage stays below the 60V breakdown threshold. Consider thermal resistance characteristics if multiple units are mounted closely on the board.

Single FETs, MOSFETs Part Context

This part belongs to ROHM Semiconductor's discrete transistor portfolio, specifically focusing on silicon N-channel MOSFETs. The manufacturer specializes in components for automotive, industrial, and consumer electronics sectors. The RHK003 series represents their solution for low-power switching needs where compact size and efficient drive voltages are prioritized over high-current handling capabilities.