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Product Detailed Parameters
- Description：IGBT 1100V 60A TO-247
- Series：-
- Mfr：Renesas
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1100 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：100 A
- Vce(on) (Max) @ Vge, Ic：2.35V @ 15V, 60A
- Power - Max：250 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247
- Grade：-
- Qualification：-
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Overview
The RJH1BF7RDPQ-80#T2 is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics Corporation. It features a maximum collector-emitter breakdown voltage of 1200 V and a continuous collector current rating of 60 A. The device is housed in a TO-247-3 through-hole package, suitable for high-power applications. Key electrical characteristics include a maximum power dissipation of 250 W at 25°C and a typical on-state collector-emitter voltage of 2.4 V measured at a gate-emitter voltage of 15 V and a collector current of 35 A. The component supports a maximum junction temperature of 150°C and complies with RoHS3 standards.
Feature Summary
- High-voltage capability with 1200 V collector-emitter breakdown rating
- Robust current handling with 60 A continuous collector current specification
- Standard input type configuration for straightforward driver integration
- Through-hole mounting design utilizing the TO-247-3 package format
Applications
- Industrial motor drives and inverters
- Switch-mode power supplies (SMPS)
- High-frequency induction heating systems
Procurement Notes
This specific part number is officially listed as obsolete or end-of-life. Verification of availability should focus on remaining stock from authorized distributors or secondary market suppliers. Designers must confirm the exact suffix and revision level against current datasheets to ensure compatibility with existing assembly processes and regulatory requirements before procurement.
Selection Notes
When selecting this IGBT, verify that the thermal management system can handle the 250 W power dissipation limit within the specified 150°C junction temperature range. Ensure the driving circuit provides the required 15 V gate-emitter voltage to achieve the rated 60 A current capacity. Consider the switching speed characteristics relative to the application's frequency requirements to minimize switching losses.
Part Context
The RJH1BF7 series belongs to Renesas' portfolio of discrete power semiconductors designed for medium-to-high power conversion. These components are engineered for reliability in demanding industrial environments. The RJH1BF7RDPQ-80#T2 variant specifically targets applications requiring robust voltage blocking and moderate current handling in a standard through-hole form factor.
Replacement Considerations
Direct replacement requires matching the 1200 V / 60 A / TO-247-3 specifications. Verify pinout compatibility and thermal resistance values. Check if alternative manufacturers offer equivalent switching times and saturation voltages to maintain system performance without redesigning the gate drive circuitry.
