RJH1CM5DPQ-E0#T2

$8.14

Description：IGBT 1200V 30A TO-247
Series：-

SKU:c5f559d242f9 Category: Single IGBTs Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：IGBT 1200V 30A TO-247
Series：-
Mfr：Renesas Electronics Corporation
Package：Bulk
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：30 A
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 15A
Power - Max：245 W
Switching Energy：1.6mJ (on), 700µJ (off)
Input Type：Standard
Gate Charge：74 nC
Td (on/off) @ 25°C：40ns/100ns
Test Condition：600V, 15A, 5Ohm, 15V
Reverse Recovery Time (trr)：200 ns
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247
Grade：-
Qualification：-

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RJH1CM5DPQ-E0#T2

Overview

The RJH1CM5DPQ-E0#T2 is a high-voltage Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics Corporation. It is housed in a TO-247-3 package and features a collector-emitter breakdown voltage of 1200 V. The device exhibits a typical collector-emitter saturation voltage of 2.1 V at an IC of 15 A and VGE of 15 V. It includes an integrated fast recovery diode with a reverse recovery time of 170 ns. The component supports a short-circuit withstand time of 10 μs, making it suitable for robust inverter applications.

Feature Summary

Integrated fast recovery diode for efficient switching performance
High short-circuit withstand capability for system protection
Low collector-emitter saturation voltage to minimize conduction losses

Applications

Inverter circuits
Industrial motor drives
Automotive power systems

Procurement Notes

Verify the obsolete status of this specific part number before initiating procurement. Confirm that the intended application can accommodate end-of-life components or plan for immediate transition to qualified substitutes. Ensure all technical specifications of replacement devices match the original design requirements to maintain system integrity and safety compliance.

Selection Notes

Select this component based on its 1200 V rating and thermal characteristics required for high-power inversion. Evaluate the trade-off between the low saturation voltage and the integrated diode's recovery speed. Consider the physical dimensions of the TO-247-3 package for heat dissipation planning and PCB layout constraints within the target electronic assembly.

Part Context

This IGBT belongs to Renesas' discrete power semiconductor portfolio, designed for demanding power conversion tasks. It complements the company's broader range of automotive and industrial solutions, providing reliable switching elements for high-voltage environments where efficiency and durability are critical operational parameters.

Replacement Considerations

Public confirmed substitute part numbers include STGW15H120DF2. Verify pinout compatibility and electrical parameter alignment when transitioning to alternative suppliers to ensure seamless integration into existing designs.