RJH1CV5DPK-00#T0

Overview

The RJH1CV5DPK-00#T0 is a trench-gate Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics. It features a maximum collector-emitter breakdown voltage of 1200 V and a continuous collector current rating of 5 A at 25°C. The device utilizes a TO-3P (SC-65-3) through-hole package, suitable for high-power applications requiring robust thermal performance. Key electrical parameters include a typical saturation voltage of approximately 2.8 V at 5 A and 15 V gate drive. Switching characteristics are defined by turn-on and turn-off times, with specific energy losses documented under standard test conditions. The component operates within a junction temperature range up to 175°C.

Feature Summary

• High-voltage capability designed for industrial power conversion systems
• Trench-gate technology providing optimized switching performance and low conduction loss
• Robust TO-3P packaging facilitating efficient heat dissipation in high-current scenarios

Applications

• Industrial motor drives and servo amplifiers
• Uninterruptible Power Supplies (UPS) systems
• High-frequency welding equipment inverters

Procurement Notes

Verify the exact suffix and manufacturer part number against official Renesas documentation before ordering. Confirm availability status as components may be subject to limited supply or end-of-life notices. Ensure compliance with RoHS directives and moisture sensitivity levels specified in the latest datasheet revision. Cross-reference distributor listings with the manufacturer's official product page to avoid counterfeit parts.

Selection Notes

Select this IGBT for applications requiring 1200 V blocking voltage and moderate current handling around 5 A. Consider the thermal resistance of the TO-3P package when designing heatsinking solutions. Evaluate switching speed requirements against the device's turn-on and turn-off times to minimize losses in high-frequency topologies. Ensure gate drive voltages remain within the specified safe operating area to prevent latch-up or excessive stress.

Part Context

This component belongs to the Renesas RJH series of high-voltage IGBTs, specifically engineered for demanding power electronics applications. The RJH1CV5DPK variant represents a specific current and voltage class within this family, utilizing trench-gate architecture for improved efficiency compared to older planar technologies. It is commonly integrated into modules or discrete setups for industrial inverters and converters where reliability under high thermal stress is critical.

Replacement Considerations

Direct replacements must match the 1200 V / 5 A specification and TO-3P pinout. Verify equivalent switching energies and saturation voltages from competitor datasheets. Ensure thermal interface material compatibility and mounting hole dimensions align with existing PCB or chassis designs.