RJH1CV6DPK-00#T0

$4.96

Description：IGBT TRENCH 1200V 60A TO-3P
Series：-

SKU:33103851c9a3 Category: Single IGBTs Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH 1200V 60A TO-3P
Series：-
Mfr：Renesas Electronics Corporation
Package：Tube
IGBT Type：Trench
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：60 A
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：2.6V @ 15V, 30A
Power - Max：290 W
Switching Energy：2.3mJ (on), 1.7mJ (off)
Input Type：Standard
Gate Charge：105 nC
Td (on/off) @ 25°C：46ns/125ns
Test Condition：600V, 30A, 5Ohm, 15V
Reverse Recovery Time (trr)：180 ns
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-3P-3, SC-65-3
Supplier Device Package：TO-3P
Grade：-
Qualification：-

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RJH1CV6DPK-00#T0

Overview

The RJH1CV6DPK-00#T0 is a trench-gate Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics Corporation. It features a collector-emitter breakdown voltage of 1200V and a continuous collector current rating of 60A. The device supports a maximum power dissipation of 290W and operates within a junction temperature range up to 150°C. Packaged in a TO-3P-3 (SC-65-3) leaded format, it integrates a built-in Fast Recovery Diode (FRD). Key switching parameters include a turn-on time of 40ns and a turn-off time of 80ns at test conditions of 300V, 22A, and 5 ohms gate resistance.

Feature Summary

High-voltage trench-gate IGBT technology for efficient power switching
Integrated built-in fast recovery diode for simplified circuit design
Robust thermal performance with high power dissipation capability

Applications

Inverter applications
Industrial motor drives
Power supply systems

Procurement Notes

This component is officially classified as obsolete and is no longer manufactured by Renesas Electronics Corporation. Verification of availability should focus on identifying valid substitute part numbers from the manufacturer or authorized distributors. Ensure that any replacement component meets the original electrical specifications, including voltage ratings, current capacity, and package dimensions, to maintain system integrity.

Selection Notes

Selection requires evaluating the specific voltage and current demands of the target application against the device's 1200V and 60A ratings. Consider the thermal management requirements given the 290W power dissipation limit and the TO-3P package type. Verify compatibility with existing gate drive circuits regarding the specified switching times and gate charge characteristics to ensure optimal performance.

Part Context

The RJH1CV6DPK-00#T0 belongs to Renesas' single IGBT product line designed for high-power applications. It utilizes trench-gate technology to achieve low saturation voltage and efficient switching. The inclusion of a monolithic fast recovery diode distinguishes it from standard IGBTs, making it suitable for bridge configurations without requiring external diodes.

Replacement Considerations

Public confirmed substitute: IKW40N120T2FKSA1. Verify pinout compatibility and thermal resistance values when transitioning to alternative components.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

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Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

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Mode of Transportation

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.