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Product Detailed Parameters
- Description：IGBT
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Download product information
Overview
The RJH30E2DPP-Z0#T2 is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics Corporation. It belongs to the discrete semiconductor products category, specifically designed for power switching applications. The component functions as a high-voltage switch capable of handling significant current loads with low conduction losses. It integrates an IGBT die with a fast recovery anti-parallel diode in a single package to facilitate efficient commutation. This device is engineered for robust performance in demanding electrical environments.
Feature Summary
- Single IGBT configuration with integrated anti-parallel diode
- Designed for high-efficiency power switching applications
- Engineered for robust thermal and electrical performance
Applications
- Motor drive inverters
- Switched-mode power supplies (SMPS)
- Induction heating systems
Procurement Notes
Verify the exact suffix Z0#T2 against the manufacturer's official datasheet to confirm pinout and electrical characteristics. Ensure the component meets AEC-Q101 or relevant industrial standards if used in automotive contexts. Cross-reference the date code and lot number with Renesas documentation to guarantee authenticity and traceability before integration into production designs.
Selection Notes
Select this component based on required voltage ratings, continuous collector current, and switching speed specifications. Evaluate thermal resistance capabilities and package suitability for the target PCB layout. Compare total system efficiency requirements against the device's saturation voltage and turn-off energy losses. Ensure compatibility with gate driver circuits regarding voltage levels and drive strength requirements.
Part Context
This part is part of Renesas' discrete semiconductor portfolio, focusing on power management solutions. It complements other power devices like MOSFETs and GaN transistors within the company's ecosystem. The product line targets industrial and automotive sectors requiring reliable high-power switching components. Renesas provides supporting design tools and application notes for integrating these devices into complex power electronics architectures.
Replacement Considerations
Consult Renesas official substitution guides for direct replacements. Verify that alternative parts match voltage, current, and thermal specifications exactly. Check for pin-to-pin compatibility if board space is constrained. Ensure switching characteristics align with existing gate driver designs to prevent reliability issues.
