RJH6075DPM-N0#T0

$3.74

Description：IGBT
Series：*

SKU:7dc80c65aa32 Category: Single IGBTs Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：IGBT
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：-
Current - Collector (Ic) (Max)：-
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：-
Power - Max：-
Switching Energy：-
Input Type：-
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

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RJH6075DPM-N0#T0

Overview

The RJH6075DPM-N0#T0 is a trench-gate Insulated Gate Bipolar Transistor (IGBT) manufactured by Renesas Electronics Corporation. It features a maximum collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 90 A at 25°C. The device is housed in a TO-3P package with a maximum power dissipation of 300 W. Key electrical parameters include a gate charge of 130 nC, an on-state collector-emitter voltage of 2.2 V at 50 A, and switching times of 60 ns for turn-on and 190 ns for turn-off.

Feature Summary

Utilizes trench gate technology to achieve low conduction losses and high efficiency.
Designed for robust performance in high-power inverter applications.
Features a through-hole TO-3P package suitable for high-current thermal management.

Applications

Uninterruptible Power Supply (UPS) systems
Motor control drives
Solar power generation inverters
Welding equipment

Procurement Notes

Verify the specific suffix N0#T0 against official Renesas documentation to confirm exact manufacturing lot details and compliance status. Check for End-of-Life notices or Product Change Notifications as this component series may have availability constraints. Ensure compatibility with existing thermal interface materials and mounting hardware for the TO-3P package.

Selection Notes

Select this IGBT for applications requiring 600V blocking capability and up to 90A continuous current. Consider the 2.2V Vce(on) for conduction loss calculations at rated current. Verify that the gate drive circuit can supply sufficient current to manage the 130 nC gate charge within the required switching frequency limits. Ensure the PCB or heatsink design supports the 300 W power dissipation rating.

Part Context

This part belongs to the RJH60D7 series of trench-gate IGBTs from Renesas. These devices are engineered for inverter applications operating typically between 1 kHz and 50 kHz. The series is characterized by optimized trade-offs between switching speed and conduction voltage, making it suitable for medium-frequency power conversion tasks.

Replacement Considerations

Direct substitutes should be sought from the same RJH60D7 family or equivalent 600V/90A trench IGBTs in TO-3P packages. Verify pinout compatibility and ensure that switching energy values (Eon/Eoff) do not exceed the thermal limits of the original design.

FAQ

Is the RJH6075DPM-N0#T0 guaranteed against short circuits?

No, this specific model is not guaranteed against short circuits. It is designed for general inverter applications where short-circuit protection is managed by external control logic.