RJH60A85RDPE-00#J3

RJH60A85RDPE-00#J3

  • Description:IGBT TRENCH 600V 30A LDPAK
  • Series:-

SKU:a9bafb30abd2 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT TRENCH 600V 30A LDPAK
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)
  • IGBT Type:Trench
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):30 A
  • Current - Collector Pulsed (Icm):-
  • Vce(on) (Max) @ Vge, Ic:1.8V @ 15V, 15A
  • Power - Max:113 W
  • Switching Energy:430µJ (on), 300µJ (off)
  • Input Type:Standard
  • Gate Charge:56 nC
  • Td (on/off) @ 25°C:40ns/86ns
  • Test Condition:300V, 15A, 5Ohm, 15V
  • Reverse Recovery Time (trr):160 ns
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-83
  • Supplier Device Package:LDPAK
  • Grade:-
  • Qualification:-

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RJH60A85RDPE-00#J3

Overview

The RJH60A85RDPE-00#J3 is a reverse conducting IGBT with a monolithic diode, manufactured by Renesas Electronics Corporation. It features a short circuit withstand time of 5 μs typical and low collector to emitter saturation voltage. The device is housed in an LDPAK package.

Feature Summary

  • Reverse conducting IGBT structure integrated with a monolithic diode
  • Short circuit withstand capability of 5 μs typical
  • Low collector to emitter saturation voltage for efficient conduction

Applications

  • Power conversion systems requiring high reliability
  • Inverter circuits utilizing reverse conducting topology
  • Industrial motor drive applications

Procurement Notes

Verify the specific suffix #J3 against official Renesas documentation to confirm exact ordering and packaging details. Ensure compatibility with LDPAK mounting requirements. Cross-reference datasheet parameters for thermal management design. Confirm RoHS status and lead-free specifications as per current manufacturing standards. Validate part authenticity through authorized channels.

Selection Notes

Select this component for applications demanding robust short circuit protection and reduced switching losses. The integrated monolithic diode simplifies circuit design by eliminating external freewheeling diodes. Consider the LDPAK package for space-constrained designs requiring effective heat dissipation. Evaluate thermal resistance characteristics against system power dissipation limits.

Part Context

This discrete semiconductor module belongs to Renesas's IGBT product line, designed for medium-power switching applications. It combines the advantages of IGBTs with the convenience of integrated diodes, offering a compact solution for modern power electronics. The LDPAK package provides a balance between performance and footprint.

Replacement Considerations

Direct substitutes may include other reverse conducting IGBTs from Renesas with similar voltage and current ratings. Verify pinout compatibility and thermal characteristics before substitution. Consult official replacement guides for cross-referencing equivalent components.

RJH60A85RDPE-00#J3RJH60A85RDPE-00#J3

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